Dopant redistribution refers to the unintended movement or diffusion of dopant atoms within a semiconductor wafer during thermal processing. This phenomenon can occur when heat causes dopants to migrate from their intended locations in the crystal lattice.
Such redistribution can disrupt carefully engineered doping profiles, leading to changes in conductivity and reduced device precision. Even small shifts in dopant placement can significantly impact the performance and reliability of semiconductor components.
Controlling dopant redistribution is critical in advanced semiconductor manufacturing, where precise thermal management and optimized processing conditions are required to maintain device integrity.